| PART |
Description |
Maker |
| TC55VD1636FF-133 |
512K Word x 36 Bit Synchronous No-turnround Static RAM(512K 字x36位同步无转向静RAM)
|
Toshiba Corporation
|
| TC554001AFT-85V TC554001AFT-70V TC554001ATR-85V TC |
512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器（为512k字8静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| TC554001ATRI-70V TC554001AFI-70V TC554001ATRI-85V |
512K word x 8 Static RAM(512K x 8 静RAM)
|
Toshiba Corporation
|
| UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 |
2M x 8 Static RAM
256K x 4 Static RAM x4快速页面模式的DRAM
512K x 32 Static RAM x4快速页面模式的DRAM
3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM x4快速页面模式的DRAM
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
512K x 24 Static RAM x4快速页面模式的DRAM
2-Mbit (128K x 16) Static RAM x4快速页面模式的DRAM
128K x 8 Static RAM 128K的8静态RAM
x4FastPageModeDRAM
|
Elpida Memory, Inc.
EPCOS AG
STMicroelectronics N.V.
NEC, Corp.
|
| UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65 |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL™ Architecture
x4 EDO Page Mode DRAM
512K (32K x 16) Static RAM
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
128K x 8 Static RAM 128K的8静态RAM
|
Omron Electronics, LLC
|
| MS52C1162A |
65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM 1,048,576-Word × 16-Bit or 2,097,152-Word × 8-Bit One Time PROM(64k字6位或128k字位静态RAM 1M字6位或2M字OTPROM)
|
OKI SEMICONDUCTOR CO., LTD.
|
| IS62WV51216BLL-55BLI IS62WV51216ALL-70XI IS62WV512 |
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 12k × 16低电压，超低功耗的CMOS静态RAM
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 55 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| W24V04 |
512K×8bit CMOS Static RAM(512K×8位CMOS静态RAM)
|
Winbond Electronics Corp
|
| CY7C1049B-15VXC CY7C1049B-15VXI |
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36
|
Cypress Semiconductor, Corp.
|
| CY7C1049BNV33-12VI CY7C1049BNV33-12VXC CY7C1049BNV |
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 12 ns, PDSO36
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 12 ns, PDSO44
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 20 ns, PDSO36
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
36-Mbit QDR™-II SRAM 2-Word Burst Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Flow-through SRAM with NoBL™ Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
SPI Serial EEPROM SPI串行EEPROM
36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM
256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc.
Electronic Theatre Controls, Inc.
|
| HM51258P HM51258P-10 HM51258P-12 HM51258P-15 HM512 |
262,144-word x 1-bit Static Column CMOS Dynamic RAM
262144 word x 1 Bit Static Column CMOS DRAM
|
Hitachi Semiconductor
|
